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Energy-Efficient Circuits and Systems Group
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A 256 Kb 65 Nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

Verma, N., A. P. Chandrakasan, "A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy," IEEE Journal of Solid-State Circuits, pp. 141-149, January 2008.