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A Low-Voltage 1 Mb FRAM In 0.13 μm CMOS Featuring Time-to-Digital Sensing For Expanded Operating Margin

Qazi, M., M. Clinton, S. Bartling, A. P. Chandrakasan, "A Low-Voltage 1 Mb FRAM in 0.13 μm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin," IEEE Journal of Solid-State Circuits, vol.47, no.1, pp.141-150, Jan. 2012.