Heterogeneous Integration Of BEOL Logic And Memory In A Commercial Foundry: Multi-Tier Complementary Carbon Nanotube Logic And Resistive RAM At A 130 Nm Node

Srimani T., G. Hills, M. Bishop, C. Lau, P. Kanhaiya, R. Ho, A. Amer, M. Chao, A. Yu, A. Wright, A. Ratkovich, D. Aguilar, A. Bramer, C. Cecman, A. Chov, G. Clark, G. Michaelson, M. Johnson, K. Kelley, P. Manos, K. Mi, U. Suriono, S. Vuntangboon, H. Xue, J. Humes, S. Soares, B. Jones, S. Burack, Arvind, A. P. Chandrakasan, B. Ferguson, M. Nelson, M. M. Shulaker, "Heterogeneous Integration of BEOL Logic and Memory in a Commercial Foundry: Multi-Tier Complementary Carbon Nanotube Logic and Resistive RAM at a 130 nm Node," IEEE Symposium on VLSI Technology (VLSIT), Jun. 2020.