RaM-SAR: A Low Energy And Area Overhead, 11.3 FJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC With Power And EM Side-channel Attack Resilience

Chen R., H. Wang, A. P. Chandrakasan, H.-S. Lee, "RaM-SAR: A Low Energy and Area Overhead, 11.3 fJ/conv.-step 12b 25MS/s Secure Random-Mapping SAR ADC with Power and EM Side-channel Attack Resilience," IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Jun. 2022.