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A Low-Voltage 1Mb FeRAM In 0.13μm CMOS Featuring Time-to-Digital Sensing For Expanded Operating Margin In Scaled CMOS

Qazi, M., M. Clinton, S. Bartling, A. Chandrakasan, "A Low-Voltage 1Mb FeRAM in 0.13μm CMOS Featuring Time-to-Digital Sensing for Expanded Operating Margin in Scaled CMOS," IEEE International Solid-State Circuits Conference (ISSCC), pp. 208-209, Feb 2011. [Slides]