A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy
Verma, N., A. P. Chandrakasan, "A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy," IEEE Journal of Solid-State Circuits, pp. 141-149, January 2008.
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Nanometer MOSFET Variation in Minimum Energy Subthreshold Circuits
Verma, N., J. Kwong, A. P. Chandrakasan, "Nanometer MOSFET Variation in Minimum Energy Subthreshold Circuits," IEEE Transactions on Electron Devices, pp. 163-174, January 2008.
Minimum Energy Tracking Loop With Embedded DC-DC Converter Enabling Ultra-Low-Voltage Operation Down to 250 mV in 65 nm CMOS
Ramadass, Y. K., A. P. Chandrakasan, "Minimum Energy Tracking Loop With Embedded DC-DC Converter Enabling Ultra-Low-Voltage Operation Down to 250 mV in 65 nm CMOS," IEEE Journal of Solid-State Circuits, pp. 256-265, January 2008.